MRI5123C is a infrared emitting diode in GaAlAs on GaAs technology, molded in clear, plastic
packages.In comparison with the standard GaAs on GaAs technology . These emitters achieve more
than 100 % radiant power improvement at a similar wavelength .The forward voltages at low current
and at high pulse current roughly correspond to the low values of the standardtechnology.Therefore
these emitters are ideally suitable as high performance replacements of standard emitters.
Features
Extra high radiant power and radiant intensity
Angle of Intensity ± 30 °
High reliability
Low forward voltage
Suitable for high pulse current operation
Standard (∮5 mm) package
Peak wavelength λ = 940 nm
Good spectral matching to Si photodetectors
Lead-free component
Component in accordance to RoHS
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors